Use of empirically deduced composition and temperature dependent intrinsic carrier density in Si1−xGex, In1−xGaxAs and In1−xGaxAsyP1−y in calculating minimum capacitance in C - V plot of MIS structure
Identifieur interne : 001390 ( Main/Exploration ); précédent : 001389; suivant : 001391Use of empirically deduced composition and temperature dependent intrinsic carrier density in Si1−xGex, In1−xGaxAs and In1−xGaxAsyP1−y in calculating minimum capacitance in C - V plot of MIS structure
Auteurs : Sajal K. Paul [Inde] ; P. K. Basu [Inde]Source :
- Solid State Electronics [ 0038-1101 ] ; 1992.
Abstract
Empirical expressions for the composition and temperature dependence of intrinsic carrier densities in Si1−xGex, In1−xGaxAs and In1−xGaxAsyP1−y are developed. The value is then used to compute the minimum capacitance in AlSi3N4Si1−xGex MIS structures and good agreement is obtained with the experimental data. The expected values of minium capacitance for MIS diodes made of the other two materials are given.
Url:
DOI: 10.1016/0038-1101(93)90115-7
Affiliations:
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